BLT50 数据手册 - NXP（恩智浦）

●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 20V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 10V 集电极连续输出电流ICCollector Current(IC)| 500mA/0.5A 截止频率fTTranstion Frequency(fT)| 470MHz 直流电流增益hFEDC Current Gain(hFE)| 25 管压降VCE（sat）Collector-Emitter Saturation Voltage| 7.5V 耗散功率PcPower Dissipation| 2W Description & Applications| UHF power transistor FEATURES SMD encapsulation Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band. 描述与应用| UHF功率晶体管 特点 SMD封装 镀金确保 出色的可靠性。 说明 NPN硅平面外延晶体管封装在一个SOT223表面安装的信封和设计主要用于手持式无线电设备在470 MHz的通信频段。