Datasheet 搜索 > 双极性晶体管 > Infineon（英飞凌） > BFR193E6327 数据手册 > BFR193E6327 数据手册 1/7 页
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BFR193E6327 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
双极性晶体管
封装:
SOT-23
描述:
NPN双极RF晶体管 NPN Bipolar RF Transistor
Pictures:
3D模型
符号图
焊盘图
引脚图
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页面导航:
引脚图在P1Hot
标记信息在P1
电气规格在P2P3
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BFR193E6327数据手册
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BFR193
Aug-09-20011
NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
f
T
= 8 GHz
F = 1.3 dB at 900 MHz
1
2
3
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR193 RCs 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage V
CEO
12 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2
Collector current I
C
80 mA
Base current I
B
10
Total power dissipation
T
S
69 °C
1)
P
tot
580 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
st
g
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
140
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Downloaded from Elcodis.com electronic components distributor
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