Datasheet 搜索 > Infineon（英飞凌） > BSD235CH6327 数据手册 > BSD235CH6327 数据手册 1/13 页
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BSD235CH6327 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
封装:
SC-70-6(SOT-363)
描述:
20/20V,1200/350mΩ,-0.53/0.95A,P/N沟道小信号MOSFET
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BSD235CH6327数据手册
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BSD235C
OptiMOS™
2 + OptiMOS™-P 2 Small Signal Transistor
Features
· Complementary P + N channel
· Enhancement mode
· Super Logic level (2.5V rated)
· Avalanche rated
· Qualified according to AEC Q101
· 100% lead-free; RoHS compliant
· Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
1)
Parameter Symbol Conditions Unit
P N
Continuous drain current
I
D
T
A
=25 °C
-0.53 0.95 A
T
A
=70 °C
-0.46 0.76
Pulsed drain current
I
D,pulse
T
A
=25 °C
-2.1 3.8
Avalanche energy, single pulse
E
AS
P: I
D
=-0.53 A,
N: I
D
=0.95 A,
R
GS
=25 W
1.4 1.6 mJ
Gate source voltage
V
GS
V
Power dissipation
P
tot
T
A
=25 °C
W
Operating and storage temperature
T
j
, T
stg
°C
ESD class JESD22-A114-HBM °C
Soldering temperature
T
solder
°C
IEC climatic category; DIN IEC 68-1
Value
-55 ... 150
55/150/56
260
±12
0.5
1)
Remark: only one of both transistors active
0 (<250V)
PG-SOT-363
Type
Package
Tape and Reel Information
Marking
Lead Free
Packing
BSD235C
PG-SOT-363
H6327: 3000 pcs / reel
X9s
Yes
Non dry
4
5
6
1
2
3
P
N
V
DS
-20
20
V
R
DS(on),max
V
GS
=±4.5 V
1200
350
mW
V
GS
=±2.5 V
2100
600
I
D
-0.53
0.95
A
Product Summary
Rev.2.4 page 1 2015-10-08
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