Datasheet 搜索 > Infineon（英飞凌） > BSP77E6433 数据手册 > BSP77E6433 数据手册 1/11 页
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BSP77E6433 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
封装:
SOT-223-4
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BSP77E6433数据手册
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Product Summary
Drain source voltage
V
DS
42 V
On-state resistance R
DS
(
on
)
100 mW
Nominal load current I
D
(
Nom
)
2.17 A
Clamping energy E
A
S
250 mJ
VPS05163
1
2
3
4
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
Ò
technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET
â
Pin 1
Pin 2 and 4 (TAB)
Pin 3
Complete product spectrum and additional information http://www.infineon.com/hitfet
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with auto restart
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Datasheet 1 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 77
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