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BTS142DATMA1
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BTS142DATMA1数据手册
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Datasheet 1 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 142D
Product Summary
Drain source voltage
V
DS
42 V
On-state resistance R
DS
(
on
)
28 mW
Nominal load current I
D
(
Nom
)
4.6 A
Clamping energy
E
A
S
3.5 J
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with auto restart
Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
P / PG-TO252-3-11
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
Ò
technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET
â
Pin 1
Pin 2 and 4 (TAB)
Pin 3
Com
p
lete
p
roduct s
p
ectrum and additional information htt
p
://www.infineon.com/hitfet

BTS142DATMA1 数据手册

Infineon(英飞凌)
11 页 / 0.26 MByte
Infineon(英飞凌)
138 页 / 12.05 MByte
Infineon(英飞凌)
40 页 / 0.46 MByte
Infineon(英飞凌)
1 页 / 0.13 MByte

BTS142 数据手册

Infineon(英飞凌)
INFINEON  BTS142D  智能电源开关, SIPMOS技术, 低压侧, 1路输出, 10V, 45A, TO-252-3
Infineon(英飞凌)
INFINEON  BTS142DATMA1  智能电源开关, SIPMOS技术, 低压侧, 1路输出, 10V, 45A, TO-252-3
Infineon(英飞凌)
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