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BTS441RGXT 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
模拟开关芯片
封装:
TO-252-5
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P14
标记信息在P2
功能描述在P2P3
电气规格在P6
导航目录
BTS441RGXT数据手册
Page:
of 17 Go
若手册格式错乱，请下载阅览PDF原文件
Data sheet 5 Rev. 1.21, 2012-12-06
BTS441RG
Maximum Ratings at T
j
= 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4) V
bb
43 V
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
V
bb
34 V
Load dump protection
1)
V
LoadDump
= V
A
+ V
s
, V
A
= 13.5 V
R
I
2)
= 2 Ω, R
L
= 0,5 Ω, t
d
= 200 ms, IN= low or high
V
Load dump
3)
60 V
Load current (Short-circuit current, see page 5) I
L
self-limited A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC) ; TC≤25°C P
tot
125 W
Maximal switchable inductance, single pulse
V
bb
= 12V, T
j,start
= 150°C, T
C
= 150°C const.
(see diagram, p.7) I
L(ISO)
= 21 A, RL= 0 Ω: E
4)
AS
=0.7J: Z
L
2.1 mH
Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST:
Out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
V
ESD
1.0
4.0
8.0
kV
Input voltage (DC) V
IN
-10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
I
IN
I
ST
±2.0
±5.0
mA
Thermal resistance chip - case:
junction - ambient (free air):
R
thJC
R
thJA
≤ 1
≤ 75
K/W
SMD version, device on pcb
5)
: ≤ 33
1)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND pin, e.g. with a 150 Ω
resistor in the GND connection. A resistor for the protection of the input is integrated.
2)
R
I
= internal resistance of the load dump test pulse generator
3)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4)
E
AS
is the maximum inductive switch off energy
5)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70μm thick) copper area for V
bb
connection. PCB is vertical without blown air.
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