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BTS442E2E3062AXT 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
电源管理
封装:
TO-220
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BTS442E2E3062AXT数据手册
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PROFET
®
BTS 442 E2
Data Sheet 1 of 14 2010-Jan-26
Smart Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short-circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1
)
•
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of V
bb
protection
2)
•
Electrostatic discharge (ESD) protection
•
Green Product (RoHS compliant)
•
AEC qualified
Application
•
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS
chip on chip technology. Providing embedded protective functions.
+ V
bb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
R
bb
1)
No external components required, reverse load current limited by connected load.
2)
Additional external diode required for charged inductive loads
Product Summary
Overvoltage protection V
bb(AZ)
63 V
Operating voltage
V
bb(on)
4.5 ... 42 V
On-state resistance R
ON
18
mΩ
Load current (ISO) I
L(ISO)
21 A
Current limitation I
L(SCr)
70 A
PG-TO220-5-11 PG-TO263-5-2
5
Standard
1
5
SMD
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