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BU508A 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
双极性晶体管
封装:
TO-247-3
描述:
高压快速开关NPN功率晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
原理图在P1
技术参数、封装参数在P1
应用领域在P1
电气规格在P2
导航目录
BU508A数据手册
Page:
of 8 Go
若手册格式错乱，请下载阅览PDF原文件
BU208A
BU508A/BU508AFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
■ STMicroelectronics PREFERRED
SALESTYPES
■ HIGH VOLTAGE CAPABILITY (> 1500 V)
■ FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS:
■ HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208A, BU508A and BU508AFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and use a Hollow Emitter structure to enhance
switching speeds.
INTERNAL SCHEMATIC DIAGRAM
April 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 1500 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 700 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 10 V
I
C
Collector Current 8 A
I
CM
Collector Peak Current (t
p
< 5 ms) 15 A
BU208A BU508A BU508AFI
TO - 3 TO - 218 ISOWATT218
P
tot
Total Dissipation at T
c
= 25
o
C 150 125 50 W
V
isol
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
2500 V
T
stg
Storage Temperature -65 to 175 -65 to 150 -65 to 150
o
C
T
j
Max. Operating Junction Temperature 175 150 150
o
C
1
2
3
TO-218 ISOWATT218
1
2
3
1
2
TO-3
For TO-3 :
C = Tab
E = Pin2.
®
1/8
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