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BU508DF 数据手册 - NXP（恩智浦）
制造商:
NXP（恩智浦）
封装:
SOT199
描述:
硅扩散型功率晶体管 Silicon Diffused Power Transistor
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
BU508DF数据手册
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Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508DF
Fig.9. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.10. Forward bias safe operating area. T
hs
= 25˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted with heatsink compound and
30
±
5 newton force on the centre of
the envelope.
Fig.11. Forward bias safe operating area. T
hs
= 25˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB:
Mounted without heatsink compound and
30
±
5 newton force on the centre of
the envelope.
1.0E-07 1.0E-05 1E-03 1.0E-01 1.0E+1
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
bu508ax
t / s
Zth K/W
D =
t
p
t
p
T
T
P
t
D
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
July 1998 5 Rev 1.200
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