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BUF634F 数据手册 - Burr Brown
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引脚图在P3Hot
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封装尺寸在P20P22P23
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封装信息在P19P20P21P22P23
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BUF634F数据手册
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BUF634
SBOS030A –SEPTEMBER 2000–REVISED NOVEMBER 2015
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Supply voltage ±18 V
Input voltage ±V
S
Output short-circuit (to ground) Continuous
Operating temperature –40 125 °C
Junction temperature 150 °C
Lead temperature (soldering, 10 s) 300 °C
Storage temperature, T
stg
–55 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE UNIT
BUF634F in PDIP and SOIC Packages
V
(ESD)
Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2500 V
BUF634F in SOIC-8 Package Only
V
(ESD)
Electrostatic discharge, Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±1000 V
BUF634F in TO-220 and DDPAK Packages
V
(ESD)
Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
±2.25 ±15 ±18
Vs = (V+) - (V-) Supply voltage V
(4.5) (30) (36)
T
A
Operating temperature -40 +25 +85 °C
6.4 Thermal Information
BUF634
THERMAL METRIC
(1)
PDIP SOIC TO-220 DDPAK-TO-263 UNIT
8 PINS 8 PINS 5 PINS 5 PINS
R
θJA
Junction-to-ambient thermal resistance 46.5 103.4 32.1 41.8 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 34.8 44.2 25.6 45 °C/W
R
θJB
Junction-to-board thermal resistance 23.8 44.5 18.3 24.8 °C/W
ψ
JT
Junction-to-top characterization parameter 12 5.4 8.5 13.1 °C/W
ψ
JB
Junction-to-board characterization parameter 23.6 43.8 17.7 23.8 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance n/a n/a 0.7 2.4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953
4 Submit Documentation Feedback Copyright © 2000–2015, Texas Instruments Incorporated
Product Folder Links: BUF634
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