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BUF634F/500 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
运算放大器
封装:
TO-263-6
描述:
BUF634F/500 编带
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P3Hot
典型应用电路图在P13P14
原理图在P10
封装尺寸在P20P22P23
标记信息在P20P21
封装信息在P19P20P21P22P23
技术参数、封装参数在P4
应用领域在P1P12P30
电气规格在P5P6P11
导航目录
BUF634F/500数据手册
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BUF634
www.ti.com
SBOS030A –SEPTEMBER 2000–REVISED NOVEMBER 2015
6.5 Electrical Characteristics
At T
A
= +25°C
(1)
, V
S
= ±15 V, specifications are for both low quiescent-current mode and wide-bandwidth mode unless
otherwise specified.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
Offset Voltage ±30 ±100 mV
Offset Voltage vs Temperature Specified Temperature Range ±100 µV/°C
Offset Voltage vs Power Supply V
S
= ±2.25 V
(2)
to ±18 V 0.1 1 mV/V
Low Quiescent
±0.5 ±2
Current Mode
Input Bias Current V
IN
= 0V µA
Wide Bandwidth
±5 ±20
Mode
Low Quiescent
80 || 8
Current Mode
Input Impedance R
L
= 100 Ω MΩ || pF
Wide Bandwidth
8 || 8
Mode
Noise Voltage f = 10 kHz 4 nV/√Hz
GAIN
R
L
= 1 kΩ, V
O
= ±10 V 0.95 0.99
Gain R
L
= 100 Ω, V
O
= ±10 V 0.85 0.93 V/V
R
L
= 67 Ω, V
O
= ±10 V 0.8 0.9
OUTPUT
Current Output, Continuous ±250 mA
Positive I
O
= 10 mA (V+) –2.1 (V+) –1.7
Negative I
O
= –10 mA (V–) +2.1 (V–) +1.8
Positive I
O
= 100 mA (V+) –3 (V+) –2.4
Voltage Output V
Negative I
O
= –100 mA (V–) +4 (V–) +3.5
Positive I
O
= 150 mA (V+) –4 (V+) –2.8
Negative I
O
= –150 mA (V–) +5 (V–) +4
Low Quiescent Current Mode ±350 ±550
Short-Circuit Current mA
Wide Bandwidth Mode ±400 ±550
DYNAMIC RESPONSE
Low Quiescent
30
Current Mode
R
L
= 1 kΩ
Wide Bandwidth
180
Mode
Bandwidth, –3dB MHz
Low Quiescent
20
Current Mode
R
L
= 100 Ω
Low Quiescent
160
Current Mode
Slew Rate 20 Vp-p, R
L
= 100 Ω 2000 V/µs
0.1% 200
Settling Time 20-V Step, R
L
= 100 Ω ns
1% 50
Low Quiescent
4%
Current Mode
3.58 MHz, V
O
= 0.7 V,
Differential Gain
R
L
= 150 Ω
Wide Bandwidth
0.4%
Mode
Low Quiescent
2.5
Current Mode
3.58 MHz, V
O
= 0.7 V,
Differential Phase °
R
L
= 150 Ω
Wide Bandwidth
0.1
Mode
POWER SUPPLY
Specified Operating Voltage ±15 V
Operating Voltage Range ±2.25
(2)
±18 V
(1) Tests are performed on high speed automatic test equipment, at approximately 25°C junction temperature. The power dissipation of this
product will cause some parameters to shift when warmed up. SeeTypical Characteristics for over-temperature performance.
(2) Limited output swing available at low supply voltage. See Output voltage specifications.
Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 5
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