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BUK107-50DL 数据手册 - Philips（飞利浦）
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BUK107-50DL数据手册
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Philips Semiconductors Product specification
PowerMOS transistor BUK107-50DL
Logic level TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT
level power MOSFET in a surface
mount plastic envelope, intended as V
DS
Continuous drain source voltage 50 V
a general purpose switch for
automotive systems and other I
D
Continuous drain current 0.7 A
applications.
P
D
Total power dissipation 1.8 W
APPLICATIONS
T
j
Continuous junction temperature 150 ˚C
General controller for driving
lamps R
DS(ON)
Drain-source on-state resistance 200 mΩ
small motors
solenoids
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Overload protected up to
85˚C ambient
Overload protection by current
limiting and overtemperature
sensing
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 input
2 drain
3 source
4 drain (tab)
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
RIG
4
1
23
P
D
S
I
TOPFET
March 1997 1 Rev 1.200
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