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BUZ11 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-220-3
描述:
N - CHANNEL 50V - 0.03W - 33A TO- 220的STripFET ] MOSFET N - CHANNEL 50V - 0.03W - 33A TO-220 STripFET] MOSFET
Pictures:
3D模型
符号图
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页面导航:
型号编码规则在P2P8
标记信息在P1P7P8
封装信息在P2
技术参数、封装参数在P7
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BUZ11数据手册
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of 8 Go
若手册格式错乱，请下载阅览PDF原文件
©2001 Fairchild Semiconductor Corporation
BUZ11 Rev. C0
BUZ11
N-Channel Power MOSFET
50V, 30A, 40 mΩ
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9771.
Features
• 30A, 50V
•r
DS(ON)
= 0.040Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
BUZ11_NR4941
TO-220AB BUZ11
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
September 2013
File Number 2253.2Data Sheet
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