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BZV55C6V8 数据手册 - EIC
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BZV55C6V8数据手册
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BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 26 January 2011 5 of 13
NXP Semiconductors
BZV55 series
Voltage regulator diodes
[1] f = 1 MHz; V
R
=0V
[2] t
p
= 100 s; square wave; T
j
=25C prior to surge
13 B 12.7 13.3 50 170 10 30 7.0 9.4 11.0 80 2.5
C 12.4 14.1
15 B 14.7 15.3 50 200 10 30 9.2 11.4 13.0 75 2.0
C 13.8 15.6
16 B 15.7 16.3 50 200 10 40 10.4 12.4 14.0 75 1.5
C 15.3 17.1
18 B 17.6 18.4 50 225 10 45 12.4 14.4 16.0 70 1.5
C 16.8 19.1
20 B 19.6 20.4 60 225 15 55 12.3 15.6 18.0 60 1.5
C 18.8 21.2
22 B 21.6 22.4 60 250 20 55 14.1 17.6 20.0 60 1.25
C 20.8 23.3
24 B 23.5 24.5 60 250 25 70 15.9 19.6 22.0 55 1.25
C 22.8 25.6
Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24
…continued
T
j
=25
C unless otherwise specified.
BZV55-
xxx
Sel Working
voltage
V
Z
(V)
Differential resistance
r
dif
()
Temperature
coefficient
S
Z
(mV/K)
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
I
Z
=5mA I
Z
=1mA I
Z
=5mA I
Z
=5mA
Min Max Typ Max Typ Max Min Typ Max Max Max
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