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BZX55B15-TAP 数据手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
齐纳二极管
封装:
DO-35-2
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BZX55B15-TAP数据手册
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若手册格式错乱，请下载阅览PDF原文件
BZX55-Series
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 06-May-13
1
Document Number: 85604
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Zener Diodes
FEATURES
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
•Low noise
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
V
Z
range nom. 2.4 to 75 V
Test current I
ZT
2.5; 5 mA
V
Z
specification Pulse current
Int. construction Single
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZX55-series BZX55-series-TR 10 000 per 13" reel 30 000/box
BZX55-series BZX55-series-TAP
10 000 per ammopack
(52 mm tape)
30 000/box
PACKAGE
PACKAGE NAME WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING
CONDITIONS
DO-35 125 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation l = 4 mm, T
L
= 25 °C P
tot
500 mW
Zener current I
Z
P
tot
/V
Z
mA
Junction to ambient air l = 4 mm, T
L
= constant R
thJA
300 K/W
Junction temperature T
j
175 °C
Storage temperature range
T
stg
- 65 to + 175 °C
Forward voltage (max.) I
F
= 200 mA V
F
1.5 V
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