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BZX55-C20 数据手册 - Taiwan Semiconductor（台湾半导体）
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Taiwan Semiconductor（台湾半导体）
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DO-35
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BZX55-C20数据手册
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Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
BZX55C SERIES
500mW Zener Diode
Features
Fast switching speed
General purpose rectification
Silicon epitaxial planar construction
Mechanical Data
Case: DO-35
Leads:Solderableper MIL-STD-202,
Method 208
Polarity: Cathode band
Marking: Type number
Weight: 0.13 grams (approx.)
DO-35
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
O
C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number Symbol Value Units
Forward Voltage @ IF = 100mA
V
F
1.0 V
Power Dissipation (Note 1)
Pd 500 mW
Thermal Resistance Junction to Ambient Air (Note 2)
R
θJA
0.3 K /mW
Operating and Storage Temperature Range
T
J
, T
STG
-65 to + 175
O
C
Notes: 1. Valid Provided that Lead are kept at ambient temperature at a distance of 8mm from case.
2. Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
Version: A07
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