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BZX84-C56 数据手册 - EIC
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BZX84-C56数据手册
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© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 9
1 Publication Order Number:
BZX84C2V4ET1/D
BZX84CxxxET1G Series,
SZBZX84CxxxET1G Series
Zener Voltage Regulators
250 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
• 250 mW Rating on FR−4 or FR−5 Board
• Zener Breakdown Voltage Range − 2.4 V to 75 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• Peak Power − 225 W (8 X 20 ms)
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ T
L
≤ 25°C
P
pk
225 W
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
P
D
R
q
JA
250
2.0
500
mW
mW/°C
°C/W
Total Power Dissipation on Alumina
Substrate, (Note 3) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
P
D
R
q
JA
300
2.4
417
mW
mW/°C
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−65 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 8
3
Cathode
1
Anode
MARKING DIAGRAM
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 o
f
this data sheet.
DEVICE MARKING INFORMATION
BZX84CxxxET1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
1
xxx M G
G
BZX84CxxxET3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
xxx = Device Code
M = Date Code*
G = Pb−Free Package
*Date Code orientation may vary depending up-
on manufacturing location.
(Note: Microdot may be in either location)
SZBZX84CxxxET1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SZBZX84CxxxET3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
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