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BZX85C12-TAP 数据手册 - VISHAY（威世）
制造商:
VISHAY（威世）
分类:
齐纳二极管
封装:
DO-41
描述:
齐纳二极管 1.3W，BZX85 系列，Vishay Semiconductor硅平面齐纳二极管（电源） 适用于稳定和削波电路的应用，带有高额定功率### 齐纳二极管，Vishay Semiconductor
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BZX85C12-TAP数据手册
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BZX85-Series
www.vishay.com
Vishay Semiconductors
Rev. 2.3, 12-Mar-2019
1
Document Number: 85607
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Zener Diodes
DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
• Silicon planar power Zener diodes
• For use in stabilizing and clipping circuits with
high power rating
• The Zener voltages are graded according to the
international E 24 standard. Replace suffix “C”
with “B” for ± 2 % tolerance
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
V
Z
range nom. 2.7 to 100 V
Test current I
ZT
2.7 to 80 mA
V
Z
specification Pulse current
Circuit configuration Single
3
3
D
D
3
D
3D Models
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZX85-series BZX85-series-TR 5000 (52 mm tape on 13" reel) 25 000/box
BZX85-series BZX85-series-TAP
5000 per ammopack
(52 mm tape)
25 000/box
PACKAGE
PACKAGE NAME WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING CONDITIONS
DO-41 (DO-204AL) 310 mg UL 94 V-0
MSL level 1
(according J-STD-020)
Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation
Valid provided that leads at a distance of 4 mm
from case are kept at ambient temperature
P
tot
1300 mW
Zener current See Table “Electrical characteristics”
Junction to ambient air
Valid provided that leads at a distance of 4 mm
from case are kept at ambient temperature
R
thJA
110 K/W
Junction temperature
T
j
175 °C
Storage temperature range
T
stg
-55 to +175 °C
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