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CM1213-08MS 数据手册 - ON Semiconductor（安森美）
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CM1213-08MS数据手册
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© 2006 California Micro Devices Corp. All rights reserved.
4 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: 408.263.3214 ● Fax: 408.263.7846 ● www.cmd.com 03/02/06
CM1213
Note 1: All parameters specified at T
A
= -40°C to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: Human Body Model per MIL-STD-883, Method 3015, C
Discharge
= 100pF, R
Discharge
= 1.5KΩ, V
P
= 3.3V, V
N
grounded.
Note 4: Standard IEC 61000-4-2 with C
Discharge
= 150pF, R
Discharge
= 330Ω, V
P
= 3.3V, V
N
grounded.
Note 5: These measurements performed with no external capacitor on V
P
(V
P
floating).
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
P
Operating Supply Voltage (V
P
-V
N
)3.35.5V
I
P
Operating Supply Current (V
P
-V
N
)=3.3V 8.0 μA
V
F
Diode Forward Voltage
Top Diode
Bottom Diode
I
F
= 8mA; T
A
=25°C
0.60
0.60
0.80
0.80
0.95
0.95
V
V
I
LEAK
Channel Leakage Current T
A
=25°C; V
P
=5V, V
N
=0V ±0.1 ±1.0 μA
C
IN
Channel Input Capacitance At 1 MHz, V
P
=3.3V, V
N
=0V, V
IN
=1.65V;
Note 2 applies
1.0 1.5 pF
ΔC
IN
Channel Input Capacitance
Matching
At 1 MHz, V
P
=3.3V, V
N
=0V, V
IN
=1.65V;
Note 2 applies
0.02 pF
C
MUTUAL
Mutual Capacitance between sig-
nal pin and adjacent signal pin
At 1 MHz, V
P
=3.3V, V
N
=0V, V
IN
=1.65V;
Note 2 applies
0.11 pF
V
ESD
ESD Protection
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per
IEC 61000-4-2 standard
b) Human Body Model,
MIL-STD-883, Method
3015
Notes 2, 4 & 5; T
A
=25°C
Notes 2, 3 & 5; T
A
=25°C
±8
±15
kV
kV
V
CL
Channel Clamp Voltage
Positive Transients
Negative Transients
T
A
=25°C, I
PP
= 1A, t
P
= 8/20uS;
Notes 2, & 5
+8.8
-1.4
V
V
R
DYN
Dynamic Resistance
Positive Transients
Negative Transients
I
PP
= 1A, t
P
= 8/20uS
Any I/O pin to Ground; Note 2 and 5
0.7
0.4
Ω
Ω
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