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CSD18502KCS 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
TO-220-3
描述:
40V，N 通道 NexFET™ 功率 MOSFET
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P3Hot
典型应用电路图在P12P13P14
原理图在P1P11
封装尺寸在P16P17P18P20P21
标记信息在P16P17P18
封装信息在P15P16P17P18P19P20P21
技术参数、封装参数在P4
应用领域在P1P28
电气规格在P5P6P7P8P9P10
导航目录
CSD18502KCS数据手册
Page:
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若手册格式错乱，请下载阅览PDF原文件
uA7805
,
uA7808
,
uA7810
uA7812
,
uA7815
,
uA7824
www.ti.com
SLVS056P –MAY 1976–REVISED JANUARY 2015
7.5 Electrical Characteristics — uA7805
at specified virtual junction temperature, V
I
= 10 V, I
O
= 500 mA (unless otherwise noted)
μA7805C
PARAMETER TEST CONDITIONS T
J
(1)
UNIT
MIN TYP MAX
25°C 4.8 5 5.2
I
O
= 5 mA to 1 A, V
I
= 7 V to 20 V,
Output voltage V
P
D
≤ 15 W
0°C to 125°C 4.75 5.25
V
I
= 7 V to 25 V 3 100
Input voltage regulation 25°C mV
V
I
= 8 V to 12 V 1 50
V
I
= 8 V to 12 V, f = 120 Hz 62 78
Ripple rejection
(2)
0°C to 125°C dB
V
I
= 8 V to 12 V, f = 120 Hz (KCT) 68
I
O
= 5 mA to 1.5 A 15 100
Output voltage regulation 25°C mV
I
O
= 250 mA to 750 mA 5 50
Output resistance f = 1 kHz 0°C to 125°C 0.017 Ω
Temperature coefficient of output voltage I
O
= 5 mA 0°C to 125°C –1.1 mV/°C
Output noise voltage f = 10 Hz to 100 kHz 25°C 40 μV
Dropout voltage I
O
= 1 A 25°C 2 V
Bias current 25°C 4.2 8 mA
V
I
= 7 V to 25 V 1.3
Bias current change 0°C to 125°C mA
I
O
= 5 mA to 1 A 0.5
Short-circuit output current 25°C 750 mA
Peak output current 25°C 2.2 A
(1) Pulse-testing techniques maintain the junction temperature as close to the ambient temperature as possible. Thermal effects must be
taken into account separately. All characteristics are measured with a 0.33-μF capacitor across the input and a 0.1-μF capacitor across
the output.
(2) This parameter is validated by design and verified during product characterization. It is not tested in production.
Copyright © 1976–2015, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: uA7805 uA7808 uA7810 uA7812 uA7815 uA7824
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