Web Analytics
Datasheet 搜索 > MOS管 > TI(德州仪器) > CSD18533Q5A 数据手册 > CSD18533Q5A 数据手册 7/13 页
CSD18533Q5A
3.323
导航目录
  • 封装尺寸在P8P11
  • 型号编码规则在P1
  • 标记信息在P11
  • 封装信息在P8P10P11P12
  • 功能描述在P1
  • 技术参数、封装参数在P1P3
  • 应用领域在P1P13
  • 电气规格在P3
CSD18533Q5A数据手册
Page:
of 13 Go
若手册格式错乱,请下载阅览PDF原文件
CSD18533Q5A
www.ti.com
SLPS388B SEPTEMBER 2012REVISED JANUARY 2015
6 Device and Documentation Support
6.1 Trademarks
NexFET is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
6.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.3 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Links: CSD18533Q5A

CSD18533Q5A 数据手册

TI(德州仪器)
13 页 / 0.79 MByte

CSD18533Q5 数据手册

TI(德州仪器)
60V N 通道 NexFET 功率 MOSFET,CSD18533Q5A
TI(德州仪器)
60V、N 沟道 NexFET MOSFET™、单路、SON5x6、5.9mΩ 8-VSONP -55 to 150
器件 Datasheet 文档搜索
器件加载中...
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件