Datasheet 搜索 > MOS管 > TI（德州仪器） > CSD18536KCS 数据手册 > CSD18536KCS 数据手册 5/11 页
￥ 32.138
CSD18536KCS 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
TO-220-3
描述:
CSD18536KCS 60V N 通道 NexFET™ 功率 MOSFET
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
CSD18536KCS数据手册
Page:
of 11 Go
若手册格式错乱，请下载阅览PDF原文件
V
SD
- Source-to-Drain Voltage (V)
I
SD
- Source-to-Drain Current (A)
0 0.2 0.4 0.6 0.8 1
0.0001
0.001
0.01
0.1
1
10
100
D009
T
C
= 25° C
T
C
= 125° C
T
C
- Case Temperature (° C)
Normalized On-State Resistance
-75 -50 -25 0 25 50 75 100 125 150 175 200
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
D008
V
GS
= 4.5 V
V
GS
= 10 V
T
C
- Case Temperature (° C)
V
GS(th)
- Threshold Voltage (V)
-75 -50 -25 0 25 50 75 100 125 150 175 200
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
D006
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-State Resistance (m:)
0 2 4 6 8 10 12 14 16 18 20
0
0.5
1
1.5
2
2.5
3
3.5
4
D007
T
C
= 25° C, I
D
= 100 A
T
C
= 125° C, I
D
= 100 A
Q
g
- Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
0 10 20 30 40 50 60 70 80 90
0
1
2
3
4
5
6
7
8
9
10
D004
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0 10 20 30 40 50 60
1
10
100
1000
10000
100000
D005
C
iss
= C
gd
+ C
gs
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
CSD18536KCS
www.ti.com
SLPS532 –MARCH 2015
Typical MOSFET Characteristics (continued)
(T
A
= 25°C unless otherwise stated)
V
DS
= 50 V I
D
= 100 A
Figure 5. Capacitance
Figure 4. Gate Charge
I
D
= 250 µA
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Figure 6. Threshold Voltage vs Temperature
I
D
= 100 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: CSD18536KCS
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
