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Datasheet 搜索 > RAM芯片 > Cypress Semiconductor(赛普拉斯) > CY62256VNLL-70ZRXI 数据手册 > CY62256VNLL-70ZRXI 数据手册 1/17 页
CY62256VNLL-70ZRXI
器件3D模型
3.101
导航目录
  • 引脚图在P3
  • 原理图在P1
  • 封装尺寸在P13P14
  • 型号编码规则在P12
  • 功能描述在P1
CY62256VNLL-70ZRXI数据手册
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CY62256VN
256-Kbit (32 K × 8) Static RAM
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document Number: 001-06512 Rev. *H Revised January 16, 2015
256-Kbit (32 K × 8) Static RAM
Features
Temperature ranges
Commercial: 0 °C to +70 °C
Industrial: –40 °C to +85 °C
Automotive-A: –40 °C to +85 °C
Automotive-E: –40 °C to +125 °C
Speed: 70 ns
Low voltage range: 2.7 V to 3.6 V
Low active power and standby power
Easy memory expansion with CE and OE features
TTL compatible inputs and outputs
Automatic power-down when deselected
CMOS for optimum speed and power
Available in standard Pb-free and non Pb-free 28-pin (300-mil)
narrow SOIC, 28-pin TSOP-I, and 28-pin reverse TSOP-I
packages
Functional Description
The CY62256VN family is composed of two high performance
CMOS static RAM’s organized as 32K words by 8 bits. Easy
memory expansion is provided by an active LOW chip enable
(CE
) and active LOW output enable (OE) and tristate drivers.
These devices have an automatic power-down feature, reducing
the power consumption by over 99% when deselected.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE
and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
0
through I/O
7
) is written into the memory location addressed
by the address present on the address pins (A
0
through A
14
).
Reading the device is accomplished by selecting the device and
enabling the outputs, CE
and OE active LOW, while WE remains
inactive or HIGH. Under these conditions, the contents of the
location addressed by the information on address pins are
present on the eight data input/output pins.
The input/output pins remain in a high impedance state unless
the chip is selected, outputs are enabled, and write enable (WE
)
is HIGH.
For a complete list of related documentation, click here.
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
COLUMN
DECODER
ROW DECODER
SENSE AMPS
INPUTBUFFER
POWER
DOWN
WE
OE
I/O
0
CE
I/O
1
I/O
2
I/O
3
32K x 8
ARRA
Y
I/O
7
I/O
6
I/O
5
I/O
4
A
10
A
13
A
11
A
12
A
A
14
A
1
0
Logic Block Diagram

CY62256VNLL-70ZRXI 数据手册

Cypress Semiconductor(赛普拉斯)
17 页 / 0.3 MByte
Cypress Semiconductor(赛普拉斯)
15 页 / 0.37 MByte

CY62256VNLL70 数据手册

Cypress Semiconductor(赛普拉斯)
CY62256VN 系列 256-Kb (32 K x 8) 3 V 70 ns 静态 RAM - TSOP-28
Cypress Semiconductor(赛普拉斯)
RAM,Cypress Semiconductor### SRAM(静态随机存取存储器)
Cypress Semiconductor(赛普拉斯)
256K ( 32K ×8 )静态RAM 256K (32K x 8) Static RAM
Cypress Semiconductor(赛普拉斯)
CY62256VN 系列 256-Kb (32 K x 8) 3 V 70 ns 静态 RAM - SOIC-28
Cypress Semiconductor(赛普拉斯)
CY62256VN 系列 256 Kb (32 K x 8) 3 V 70 ns 静态RAM - TSOP-28
Cypress Semiconductor(赛普拉斯)
256KX8 微功耗 SRAM TSOP I 70 ns
Cypress Semiconductor(赛普拉斯)
CY62256VN 系列 256 Kb (32 K x 8) 2.7 - 3.6 V 70 ns 静态RAM - SOIC-28
Cypress Semiconductor(赛普拉斯)
CY62256VN 系列 256 Kb (32 K x 8) 3 V 70 ns 静态RAM - TSOP-28
Cypress Semiconductor(赛普拉斯)
CY62256VN 系列 256 Kb (32 K x 8) 3 V 70 ns 静态RAM - TSOP-28
Cypress Semiconductor(赛普拉斯)
CY62256VN 系列 256 Kb (32 K x 8) 3 V 70 ns 静态RAM - TSOP-28
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