Datasheet 搜索 > TVS二极管 > ST Microelectronics（意法半导体） > DA108S1RL 数据手册 > DA108S1RL 数据手册 1/8 页
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DA108S1RL 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
TVS二极管
封装:
SOIC-8
描述:
STMICROELECTRONICS DA108S1RL TVS二极管, TVS, DA1系列, 单向, 18 V, SOIC, 8 引脚
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DA108S1RL数据手册
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January 2008 Rev 6 1/8
DA108S1
DA112S1
Diode array
Features
■ Array of 8 or 12 diodes
■ Low input capacitance
■ Suitable for digital line protection
Complies with following standards:
■ IEC 61000-4-2 Level 4
– 15kV (air discharge)
– 8kV (contact discharge)
Applications
■ Protection of logic side of ISDN S-interface
■ Protection of I/O lines of microcontroller
■ Signal conditioning
Description
Array of 8 or 12 diodes configured by cells of 2
diodes, each cell being used to protect signal line
from transient overvoltages by clamping action.
As maximum voltage of each diode is 18 V,
maximum input voltage range between two I/Os is
either 0 V to 18 V (REF1 = 0 V and REF2 =
+18 V) or -9 V to +9 V (REF1 = -9 V and REF2 =
+9 V)
Figure 1. Functional diagram: DA108S1
Figure 2. Functional diagram: DA112S1
SO-8
I/O1 REF1
REF2
REF3
REF4
I/O2
I/O3
I/O4
I/O1
18
27
36
45
REF1
I/O6
REF2
I/O5
I/O2
I/O3
I/O4
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