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DFLS1200-7 数据手册 - Diodes Zetex（捷特科）
制造商:
Diodes Zetex（捷特科）
分类:
肖特基二极管
封装:
PowerDI 123
描述:
300mA 至 1A，Diodes Inc超势垒整流器 (SBR) 二极管是下一代整流器。 与类似肖特基二极管相比，该两端子设备具有较低的正向电压 (VF)。 同时具有 PN 外延二极管的热稳定性和高可靠性特征。### 二极管和整流器，Diodes Inc
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DFLS1200-7数据手册
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DFLS1200
Document number: DS30628 Rev. 6 - 2
1 of 3
www.diodes.com
October 2008
© Diodes Incorporated
DFLS1200
PowerDI is a registered trademark of Diodes Incorporated.
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
PowerDI
®
123
Features
• Guard Ring Die Construction for Transient Protection
• Low Power Loss, High Efficiency
• Patented Interlocking Clip Design for High Surge Current
Capacity
• Lead Free Finish, RoHS Compliant (Note 4)
• "Green" Molding Compound (No Br, Sb)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: PowerDI
®
123
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: Cathode Band
• Terminals: Finish – Matte Tin annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.01 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
200 V
RMS Reverse Voltage
V
R
(
RMS
)
141 V
Average Forward Current
I
F
(
AV
)
1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
40 A
Thermal Characteristics
Characteristic Symbol Typ Max Unit
Thermal Resistance Junction to Ambient (Note 1)
R
θ
JA
132
⎯
°C/W
Thermal Resistance Junction to Soldering Point (Note 2)
R
θ
JS
⎯
7
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +175
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 3)
V
(
BR
)
R
200
⎯ ⎯
V
I
R
= 8μA
Forward Voltage
V
F
⎯ ⎯
0.85 V
I
F
= 1.0A
Leakage Current (Note 3)
I
R
⎯ ⎯
2
μA
V
R
= 200V, T
A
= 25°C
Total Capacitance
C
T
⎯
23
⎯
pF
V
R
= 5VDC, f = 1MHz
Notes: 1. Part mounted on FR-4 board with 2 oz., minimum recommended copper pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf. T
A
= 25°C
2. Theoretical R
θJS
calculated from the top center of the die straight down to the PCB/cathode tab solder junction.
3. Short duration pulse test used to minimize self-heating effect.
4. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
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