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DG417DJ-E3 数据手册 - Vishay Siliconix
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Vishay Siliconix
分类:
接口芯片
封装:
DIP-8
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DG417DJ-E3数据手册
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若手册格式错乱，请下载阅览PDF原文件
www.vishay.com
2
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
Vishay Siliconix
DG417, DG418, DG419
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 6.5 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
ORDERING INFORMATION
Temp. Range Package Part Number
DG417, DG418
- 40 °C to 85 °C
8-Pin Plastic MiniDIP
DG417DJ
DG417DJ-E3
DG418DJ
DG418DJ-E3
8-Pin Narrow SOIC
DG417DY
DG417DY-E3
DG417DY-T1
DG417DY-T1-E3
DG418DY
DG418DY-E3
DG418DY-T1
DG418DY-T1-E3
DG419
- 40 °C to 85 °C
8-Pin Plastic MiniDIP
DG419DJ
DG419DJ-E3
8-Pin Narrow SOIC
DG419DY
DG419DY-E3
DG419DY-T1
DG419DY-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter (Voltages referenced to V-) Limit Unit
V+ 44
V
GND 25
V
L
(GND - 0.3) to (V+) + 0.3
Digital Inputs
a
, V
S
, V
D
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Current , (Any Terminal) Continuous 30
mA
Current, S or D (Pulsed at 1 ms, 10 % Duty Cycle) 100
Storage Temperature
(AK Suffix) - 65 to 150
°C
(DJ, DY Suffix) - 65 to 125
Power Dissipation (Package)
b
8-Pin Plastic MiniDIP
c
400
mW
8-Pin Narrow SOIC
d
400
8-Pin CerDIP
e
600
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