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DS90LV047ATMTC
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DS90LV047ATMTC数据手册
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DS90LV047A
SNLS044C MAY 2000REVISED APRIL 2013
www.ti.com
Functional Diagram
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
Supply Voltage (V
CC
) 0.3V to +4V
Input Voltage (D
IN
) 0.3V to (V
CC
+ 0.3V)
Enable Input Voltage (EN, EN*) 0.3V to (V
CC
+ 0.3V)
Output Voltage (D
OUT+
, D
OUT
) 0.3V to +3.9V
Short Circuit Duration (D
OUT+
, D
OUT
) Continuous
D0016A Package 1088 mW
PW0016A Package 866 mW
Maximum Package Power Dissipation @ +25°C
Derate D0016A Package 8.5 mW/°C above +25°C
Derate PW0016A Package 6.9 mW/°C above +25°C
Storage Temperature Range 65°C to +150°C
Lead Temperature Range Soldering (4 sec.) +260°C
Maximum Junction Temperature +150°C
(HBM, 1.5 kΩ, 100 pF) 10 kV
ESD Rating
(2)
(EIAJ, 0 Ω, 200 pF) 1200 V
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be ensured. They are not meant to imply
that the devices should be operated at these limits. Electrical Characteristics specifies conditions of device operation.
(2) ESD Ratings:
HBM (1.5 kΩ, 100 pF) 10 kV
EIAJ (0 Ω, 200 pF) 1200 V
Recommended Operating Conditions
Min Typ Max Units
Supply Voltage (V
CC
) +3.0 +3.3 +3.6 V
Operating Free Air Temperature (T
A
) 40 +25 +85 °C
2 Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated
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DS90LV047ATMTC 数据手册

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