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FDA50N50 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
TO-3-3
描述:
FAIRCHILD SEMICONDUCTOR FDA50N50 晶体管, MOSFET, N沟道, 48 A, 500 V, 0.089 ohm, 10 V, 5 V
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FDA50N50数据手册
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FDH50N50 / FDA50N50 — N-Channel UniFET
TM
MOSFET
©2012 Fairchild Semiconductor Corporation
FDH50N50 / FDA50N50 Rev. C2
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted.
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.46 mH, I
AS
= 48 A, V
DD
= 50 V, R
G
= 25 Ω, starting T
J
= 25°C.
3. I
SD
≤ 48 A, di/dt ≤ 200 A/μs, V
DD
≤ BV
DSS
, starting T
J
= 25°C.
4. Essentially independent of operating temperature typical characteristics.
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDH50N50_F133
FDH50N50 TO-247 Tube N/A N/A 30 units
FDA50N50
FDA50N50 TO-3PN Tube N/A N/A 30 units
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 μA 500 -- -- V
ΔBV
DSS
/ ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, Referenced to 25°C--0.5--V/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125°C
--
--
--
--
25
250
μA
μA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 20 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -20 V, V
DS
= 0 V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 μA3.0--5.0V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 24 A -- 0.089 0.105 Ω
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 48 A -- 20 -- S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-- 4979 6460 pF
C
oss
Output Capacitance -- 760 1000 pF
C
rss
Reverse Transfer Capacitance -- 50 65 pF
C
oss
Output Capacitance V
DS
= 400 V, V
GS
= 0 V, f = 1 MHz -- 161 -- pF
C
oss(eff.)
Effective Output Capacitance V
DS
= 0 V to 400 V, V
GS
= 0 V -- 342 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
DD
= 250 V, I
D
= 48 A,
V
GS
= 10 V, R
G
= 25 Ω
(Note 4)
-- 105 220 ns
t
r
Turn-On Rise Time -- 360 730 ns
t
d(off)
Turn-Off Delay Time -- 225 460 ns
t
f
Turn-Off Fall Time -- 230 470 ns
Q
g
Total Gate Charge V
DS
= 400 V, I
D
= 48 A
V
GS
= 10 V
(Note 4)
-- 105 137 nC
Q
gs
Gate-Source Charge -- 33 -- nC
Q
gd
Gate-Drain Charge -- 45 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 48 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 192 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 48 A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= 48 A,
dI
F
/dt =100 A/μs
-- 580 -- ns
Q
rr
Reverse Recovery Charge -- 10 -- μC
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