Datasheet 搜索 > Freescale(飞思卡尔) > FDC658P 数据手册 > FDC658P 数据手册 1/5 页

¥ 1.157
FDC658P 数据手册 - Freescale(飞思卡尔)
制造商:
Freescale(飞思卡尔)
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
功能描述在P1
技术参数、封装参数在P1P5
电气规格在P2P3P4
导航目录
FDC658P数据手册
Page:
of 5 Go
若手册格式错乱,请下载阅览PDF原文件

February 1999
FDC658P
Single P-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description Features
Absolute Maximum Ratings T
A
= 25°C unless otherwise note
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage -30 V
V
GSS
Gate-Source Voltage - Continuous ±20 V
I
D
Drain Current - Continuous (Note 1a) -4 A
- Pulsed -20
P
D
Maximum Power Dissipation (Note 1a) 1.6 W
(Note 1b)
0.8
T
J
,T
STG
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W
FDC658P Rev.C
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
-4 A, -30 V. R
DS(ON)
= 0.050 Ω @ V
GS
= -10 V
R
DS(ON)
= 0.075 Ω @ V
GS
= -4.5 V.
Low gate charge (8nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
SOIC-16
SOT-23
SuperSOT
TM
-8
SO-8
SOT-223SuperSOT
TM
-6
D
D
D
S
D
G
SuperSOT -6
TM
.658
pin
1
3
5
6
4
1
2
3
© 1999 Fairchild Semiconductor Corporation
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件