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FDD8424H_F085A 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
TO-252-5
描述:
PowerTrench® 双 N/P 通道 MOSFET，Fairchild SemiconductorPowerTrench® MOSFET 是优化的电源开关，可提高系统效率和功率密度。 它们组合了小栅极电荷 (Qg)、小反向恢复电荷 (Qrr) 和软性反向恢复主体二极管，有助于快速切换交流/直流电源中的同步整流。 最新的 PowerTrench® MOSFET 采用屏蔽栅极结构，可提供电荷平衡。 利用这一先进技术，这些设备的 FOM（品质因素）显著低于前一代的 FOM。 PowerTrench® MOSFET 的软性主体二极管性能可无需缓冲电路或替换更高额定电压的 MOSFET。### MOSFET 晶体管，Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
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FDD8424H_F085A数据手册
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March 2015
FDD8424H Dual N & P-Channel PowerTrench
®
MOSFET
©2013 Fairchild Semiconductor Corporation
FDD8424H Rev.1.5
www.fairchildsemi.com
1
FDD8424H
Dual N & P-Channel PowerTrench
®
MOSFET
N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ
Features
Q1: N-Channel
Max r
DS(on)
= 24mΩ at V
GS
= 10V, I
D
= 9.0A
Max r
DS(on)
= 30mΩ at V
GS
= 4.5V, I
D
= 7.0A
Q2: P-Channel
Max r
DS(on)
= 54mΩ at V
GS
= -10V, I
D
= -6.5A
Max r
DS(on)
= 70mΩ at V
GS
= -4.5V, I
D
= -5.6A
Fast switching speed
RoHS Compliant
General Description
These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Application
Inverter
H-Bridge
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Q1 Q2 Units
V
DS
Drain to Source Voltage 40 -40 V
V
GS
Gate to Source Voltage ±20 ±20 V
I
D
Drain Current - Continuous (Package Limited) 20 -20
A
- Continuous (Silicon Limited) T
C
= 25°C 26 -20
- Continuous T
A
= 25°C 9.0 -6.5
- Pulsed 55 -40
P
D
Power Dissipation for Single Operation T
C
= 25°C (Note 1) 30 35
W T
A
= 25°C (Note 1a) 3.1
T
A
= 25°C (Note 1b) 1.3
E
AS
Single Pulse Avalanche Energy (Note 3) 29 33 mJ
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 4.1
°C/W
R
θJC
Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 3.5
Device Marking Device Package Reel Size Tape Width Quantity
FDD8424H FDD8424H TO-252-4L 13” 16mm 2500 units
Dual DPAK 4L
D1/D2
G2
S2
G1
S1
N-Channel P-Channel
D1 D2
S1
G1
S2
G2
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