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FDFS2P753Z 数据手册 - ON Semiconductor（安森美）
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ON Semiconductor（安森美）
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MOS管
封装:
SOIC-8
描述:
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDFS2P753Z, 3 A, Vds=30 V, 8引脚 SOIC封装
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FDFS2P753Z数据手册
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FDFS2P753Z Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
FDFS2P753Z Rev.A
www.fairchildsemi.com
5
Figure 7.
02468
0
2
4
6
8
10
V
DD
= -15V
V
DD
= -5V
-V
GS
, GATE TO SOURCE VOLTAGE(V)
-Q
g
, GATE CHARGE(nC)
V
DD
= -10V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
20
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
800
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1
1
2
3
4
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
-I
AS
, AVALANCHE CURRENT(A)
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
R
θJA
= 78
o
C/W
V
GS
= -4.5V
V
GS
= -10V
-I
D
, DRAIN CURRENT (A)
T
A
, AMBIENT TEMPERATURE (
o
C)
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Fig u r e 11. For w a r d B i a s Safe
Op
erating Area
0.1 1 10
0.01
0.1
1
10
80
1s
DC
10s
100ms
10ms
1ms
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
O
C
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
30
Figure 12.
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
V
GS
= -10V
SINGLE PULSE
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
0.6
200
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150 T
A
–
125
-----------------------
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics T
J
= 25°C unless otherwise noted
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