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FDMC7692 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
PowerWDFN-8
描述:
PowerTrench® N 通道 MOSFET，10A 至 19.9A，Fairchild Semiconductor### MOSFET 晶体管，Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
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FDMC7692数据手册
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September 2010
©2010 Fairchild Semiconductor Corporation
FDMC7692 Rev.C
www.fairchildsemi.com
1
FDMC7692 N-Channel Power Trench
®
MOSFET
FDMC7692
N-Channel Power Trench
®
MOSFET
30 V, 13.3 A, 8.5 m:
Features
Max r
DS(on)
= 8.5 m: at V
GS
= 10 V, I
D
= 13.3 A
Max r
DS(on)
= 11.5 m: at V
GS
= 4.5 V, I
D
= 10.6 A
High performance technology for extremely low r
DS(on)
Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 16
A -Continuous T
A
= 25 °C (Note 1a) 13.3
-Pulsed 40
E
AS
Single Pulse Avalanche Energy (Note 3) 58 mJ
P
D
Power Dissipation T
C
= 25 °C 29
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
TJC
Thermal Resistance, Junction to Case 4.3
°C/W
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC7692 FDMC7692 MLP 3.3x3.3 13 ’’ 12 mm 3000 units
Bottom
D
D
D
D
S
S
S
G
Top
Pin 1
MLP 3.3x3.3
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
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