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FDN340 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
描述:
单P沟道逻辑电平的PowerTrench MOSFET Single P-Channel, Logic Level, PowerTrench MOSFET
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FDN340数据手册
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September 200
2007 Fairchild Semiconductor Corporation FDN340P Rev E1
FDN340P
Single P-Channel, Logic Level, PowerTrench
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for portable electronics
applications:load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
• –2A, 20 V R
DS(ON)
= 70 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 110 mΩ @ V
GS
= –2.5 V
• Low gate charge (7.2 nC typical).
• Highperformance trench technology for extremely
low R
DS(ON)
.
• High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability.
D
SG
Absolute Maxim um Ratings T
A
=25
o
C unless otherwise noted
Sym bol Param eter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage ±8 V
I
D
Drain Current – Continuous (Note 1a) –2 A
– Pulsed –10
Power Dissipation for Single Operation (Note 1a) 0.5P
D
(Note 1b)
0.46
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
Therm al Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 75
°C/W
Package Marking and Ordering Inform ation
Device Marking Device Reel Size Tape width Quantity
340 FDN340P 7’’ 8mm 3000 units
FDN340P
February 2007
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