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FDN357N 数据手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
SOT-23-3
描述:
ON Semiconductor Si N沟道 MOSFET FDN357N, 1.9 A, Vds=30 V, 3引脚 SOT-23封装
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FDN357N数据手册
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若手册格式错乱，请下载阅览PDF原文件
March 1998
FDN357N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings T
A
= 25
o
C unless other wise noted
Symbol Parameter FDN357N Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage - Continuous ±20 V
I
D
Drain/Output Current - Continuous 1.9 A
- Pulsed 10
P
D
Maximum Power Dissipation (Note 1a) 0.5 W
(Note 1b)
0.46
T
J
,T
STG
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
FDN357N Rev.C
1.9 A, 30 V, R
DS(ON)
= 0.090 Ω @ V
GS
= 4.5 V
R
DS(ON)
= 0.060 Ω @ V
GS
= 10 V.
Industry standard outline SOT-23 surface mount
package using proprietary SuperSOT
TM
-3 design for
superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
SuperSOT
TM
-3 N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMCIA
cards, and other battery powered circuits where fast
switching, and low in-line power loss are needed in a very small
outline surface mount package.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
G
D
S
SuperSOT -3
TM
357
D
S
G
© 1998 Fairchild Semiconductor Corporation
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