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FDN359 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
描述:
N沟道逻辑电平MOSFET PowerTrenchTM N-Channel Logic Level PowerTrenchTM MOSFET
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FDN359数据手册
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April 1999
FDN359AN
N-Channel Logic Level PowerTrench
TM
MOSFET
General Description Features
Absolute Maximum Ratings T
A
= 25
o
C unless other wise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage ±20 V
I
D
Maximum Drain Current - Continuous (Note 1a) 2.7 A
- Pulsed 15
P
D
Maximum Power Dissipation (Note 1a) 0.5 W
(Note 1b)
0.46
T
J
,T
STG
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
FDN359AN Rev.C
2.7 A, 30 V. R
DS(ON)
= 0.046 Ω @ V
GS
= 10 V
R
DS(ON)
= 0.060 Ω @ V
GS
= 4.5 V.
Very fast switching.
Low gate charge (5nC typical).
High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with 30% higher
power handling capability.
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
G
D
S
SuperSOT -3
TM
359A
D
S
G
© 1999 Fairchild Semiconductor Corporation
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