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FMMT617TA 数据手册 - Diodes（美台）
制造商:
Diodes（美台）
分类:
双极性晶体管
封装:
SOT-23-3
描述:
FMMT617 系列 NPN 3 A 15 V 表面贴装 硅 功率 晶体管 - SOT-23
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
标记信息在P1
技术参数、封装参数在P1
电气规格在P2
导航目录
FMMT617TA数据手册
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0.0
0.2
0.4
0.6
0.8
1.0
Collector Current
I
C
/I
B
=10
Collector Current
10A
Collector Current
Collector Current
0.0
I
C
/I
B
=20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
=2V
0
450
225
V
CE
=2V
0.2
0.0
1.0
0.8
0.6
0.4
10
1.0
0.1
0.01
SINGLE PULSE TEST T
amb
= 25 deg C
V
CE
(VOLTS)
TYPICAL CHARACTERISTICS
-55°C
100°C
25°C
25°C
100°C
-55°C
25°C
100°C
-55°C
25°C
100°C
-55°C
D.C.
1s
100ms
10ms
1ms
100
µ
s
0.1
10A1mA
10A1mA
1mA
10A1mA
Safe Operating Area
0.6
0.2
0.4
1.4
1.6
10m
1
1m 10m
VCE(SAT) v IC
I
C
- Collector Current (A)
100m 101
I
C
/I
B
=10
I
C
/I
B
=20
I
C
/I
B
=50
+25°C
100m
VCE(SAT) vs IC
10mA 100mA 1A
VBE(SAT) vs IC
10mA 100mA 1A
hFE vs IC
10mA 100mA 1A
VBE(ON) vs IC
10mA 100mA 1A
1.0 10 100
FMMT720
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL
FMMT722 FMMT723
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-70 -150 -100 -200 V
I
C
=-100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-70 -125 -100 -160 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 -8.8
-5 -8.8 V
I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-100
-100
nA
nA
V
CB
=-60V
V
CB
=-80V
Emitter Cut-Off
Current
I
EBO
-100 -100 nA V
EB
=-4V
Collector Emitter
Cut-Off Current
I
CES
-100
-100
nA
nA
V
CES
=-60V
V
CES
=-80V
Collector-Emitter
Saturation Voltage
V
C E(sat)
-35
-135
-140
-175
-50
-200
-220
-260
-50
-125
-210
-80
-200
-330
mV
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-0.5A, I
B
=-20mA*
I
C
=-0.5A, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, I
B
=-150mA*
I
C
=-1.5A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE( sat)
-0.94 -1.05
-0.89 -1.0 V I
C
=-1A, I
B
=-150mA*
I
C
=-1.5A, I
B
=-200mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.78 -1.0
-0.71 -1.0 V I
C
=-1A, V
CE
=-10V*
I
C
=-1.5A, V
CE
=-5V*
Static Forward
Current Transfer
Ratio
h
FE
300
300
175
40
470
450
275
60
10
300
300
250
475
450
375
250
30
I
C
=-10mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-0.1A, V
CE
=-5V*
I
C
=-0.1A, V
CE
=-10V*
I
C
=-0.5A, V
CE
=-10V*
I
C
=-1A, V
CE
=-5V*
I
C
=-1A, V
CE
=-10V*
I
C
=-1.5A, V
CE
=-5V*
I
C
=-1.5A, V
CE
=-10V*
I
C
=-3A, V
CE
=-5V*
Transition
Frequency
f
T
150 200 150 200 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
14
20 13 20 pF V
CB
=-10V, f=1MHz
Turn-On Time t
(on)
40
50 ns V
CC
=-50V, I
C
=-0.5A
I
B1
=I
B2
=-50mA
Turn-Off Time t
(off)
700 760 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT722
FMMT723
3 - 164 3 - 165
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