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FQP10N60 数据手册 - Fairchild（飞兆/仙童）
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FQP10N60数据手册
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©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQP10N60C / FQPF10N60C Rev. C
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
April 2007
QFET
®
FQP10N60C / FQPF10N60C
600V N-Channel MOSFET
Features
• 9.5A, 600V, R
DS(on)
= 0.73Ω @V
GS
= 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
TO-220
FQP Series
GSD
TO-220F
FQPF Series
GSD
D
G
S
Symbol Parameter FQP10N60C FQPF10N60C Units
V
DSS
Drain-Source Voltage 600 V
I
D
Drain Current - Continuous (T
C
= 25°C) 9.5 9.5 * A
- Continuous (T
C
= 100°C) 5.7 5.7 * A
I
DM
Drain Current - Pulsed
(Note 1)
38 38 * A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
700 mJ
I
AR
Avalanche Current
(Note 1)
9.5 A
E
AR
Repetitive Avalanche Energy
(Note 1)
15.6 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C) 156 50 W
- Derate above 25°C 1.25 0.4 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter FQP10N60C FQPF10N60C Units
R
θJC
Thermal Resistance, Junction-to-Case 0.8 2.5 °C/W
R
θCS
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
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