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FZT651 数据手册 - Diodes（美台）
制造商:
Diodes（美台）
封装:
SOT-223
描述:
单晶体管 双极, NPN, 60 V, 175 MHz, 2 W, 3 A, 200 hFE
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FZT651数据手册
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SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTORS
ISSUE 2 FEBRUARY 1995
FEATURES
* 60 Volt V
CEO
* 3 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE FZT751
PARTMARKING DETAIL FZT651
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
6A
Continuous Collector Current I
C
3A
Power Dissipation at T
amb
=25°C P
tot
2W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
60 V I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off Current I
CBO
0.1
10
µA
µA
V
CB
=60V
V
CB
=60V,T
amb
=100°C
Emitter Cut-Off Current I
EBO
0.1
µA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.12
0.43
0.3
0.6
V
V
I
C
=1A, I
B
=100mA*
I
C
=3A, I
B
=300mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9 1.25 V I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8 1 V I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
80
40
200
200
170
80
300
I
C
=50mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
Transition Frequency f
T
140 175 MHz I
C
=100mA, V
CE
=5V
f=100MHz
Switching Times t
on
45 ns I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
t
off
800 ns
Output Capacitance C
obo
30 pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FZT651
FZT651
C
C
E
B
3 - 208 3 - 207
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
- (Vol
ts
)
Single Pu lse Te st a t T
amb
=25°C
0.01
0.1
101
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
- (Vol
ts
)
I
C
- Collector Current (Amps)
h
FE
v I
C
h
-
G
ai
n
0.01
100.1 1
V
CE
=2V
0.6
0.8
1.0
1.2
I
C
- Collector Current (Amps)
V
BE(on)
v I
C
V
- (Vol
ts
)
Switching Speeds
I
C
- Collector Current (Amps)
S
w
i
t
chi
ng ti
m
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
ts
ns
125
175
225
75
0
0.6
0.8
1.0
1.2
0.4
0
0.1
0.2
0.4
0.5
0.3
0.6
0.0010.0001
I
C
/I
B
=10
1.4
0.01
100.1 1
0.0001
0.001
I
C
/I
B
=10
0.01
100.1 1
0.0001
0.001
V
CE
=2V
0
td
tr
tf
ns
100
120
40
20
60
80
140
0
1000
1200
400
200
600
800
1400
0.1 100
1s
100ms
10
DC
0.01
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100
µ
s
110
0.1
1
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