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H11A3SVM 数据手册 - ON Semiconductor（安森美）
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H11A3SVM数据手册
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©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11AXM Rev. 1.0.2 3
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics
(Continued)
(T
A
= 25°C unless otherwise specified)
Transfer Characteristics
* Typical values at T
A
= 25°C
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
DC CHARACTERISTICS
CTR Current Transfer Ratio,
Collector to Emitter
I
F
= 10mA, V
CE
= 10V 4N35M, 4N36M,
4N37M
100 %
H11A1M 50
H11A5M 30
4N25M, 4N26M
H11A2M, H11A3M
20
4N27M, 4N28M
H11A4M
10
I
F
= 10mA, V
CE
= 10V,
T
A
= -55°C
4N35M, 4N36M,
4N37M
40
I
F
= 10mA, V
CE
= 10V,
T
A
= +100°C
4N35M, 4N36M,
4N37M
40
V
CE (SAT)
Collector-Emitter
Saturation Voltage
I
C
= 2mA, I
F
= 50mA 4N25M, 4N26M,
4N27M, 4N28M,
0.5 V
I
C
= 0.5mA, I
F
= 10mA 4N35M, 4N36M,
4N37M
0.3
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
0.4
AC CHARACTERISTICS
T
ON
Non-Saturated
Tur n-on Time
I
F
= 10mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4,
H11A5M
2µs
I
C
= 2mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
4N35M, 4N36M,
4N37M
210µs
T
OFF
Tur n-off Time I
F
= 10mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
2µs
I
C
= 2mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
4N35M, 4N36M,
4N37M
210
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