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HFA08TB60SPBF 数据手册 - International Rectifier（国际整流器）
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HFA08TB60SPBF数据手册
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VS-HFA08TB60SPbF
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Vishay Semiconductors
Revision: 26-Jun-15
4
Document Number: 94048
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Fig. 3 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 4 - Typical Recovery Current vs. dI
F
/dt
Fig. 5 - Typical Stored Charge vs. dI
F
/dt
Fig. 6 - Typical dI
(rec)M
/dt vs. dI
F
/dt
80
40
0
100
1000
dI
F
/dt (A/µs)
t
rr
(ns)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
60
20
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
20
15
0
100
1000
dI
F
/dt (A/µs)
I
rr
(A)
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
5
10
500
0
100
1000
dI
F
/dt (A/µs)
Q
rr
(nC)
300
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
100
400
200
10 000
1000
100
1000
dI
F
/dt (A/µs)
dI
(rec)M
/dt (A/µs)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
100
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