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HFA3127BZ
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HFA3127BZ数据手册
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1
®
FN3076.13
HFA3046, HFA3096, HFA3127, HFA3128
Ultra High Frequency Transistor Arrays
The HFA3046, HFA3096, HFA3127 and the HFA3128 are
Ultra High Frequency Transistor Arrays that are fabricated
from Intersil Corporation’s complementary bipolar UHF-1
process. Each array consists of five dielectrically isolated
transistors on a common monolithic substrate. The NPN
transistors exhibit a f
T
of 8GHz while the PNP transistors
provide a f
T
of 5.5GHz. Both types exhibit low noise (3.5dB),
making them ideal for high frequency amplifier and mixer
applications.
The HFA3046 and HFA3127 are all NPN arrays while the
HFA3128 has all PNP transistors. The HFA3096 is an
NPN-PNP combination. Access is provided to each of the
terminals for the individual transistors for maximum
application flexibility. Monolithic construction of these
transistor arrays provides close electrical and thermal
matching of the five transistors.
Intersil provides an Application Note illustrating the use of
these devices as RF amplifiers. For more information, visit
our website at www.intersil.com.
Features
NPN Transistor (f
T
) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
NPN Current Gain (h
FE
). . . . . . . . . . . . . . . . . . . . . . . . 130
NPN Early Voltage (V
A
) . . . . . . . . . . . . . . . . . . . . . . . 50V
PNP Transistor (f
T
). . . . . . . . . . . . . . . . . . . . . . . . .5.5GHz
PNP Current Gain (h
FE
). . . . . . . . . . . . . . . . . . . . . . . . . 60
PNP Early Voltage (V
A
) . . . . . . . . . . . . . . . . . . . . . . . .20V
Noise Figure (50) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
Collector to Collector Leakage. . . . . . . . . . . . . . . . . .<1pA
Complete Isolation Between Transistors
Pin Compatible with Industry Standard 3XXX Series
Arrays
Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
VHF/UHF Amplifiers
•VHF/UHF Mixers
IF Converters
Synchronous Detectors
Ordering Information
PART NUMBER* PART MARKING TEMP. RANGE (°C) PACKAGE PKG. DWG. #
HFA3046B HFA3046B -55 to 125 14 Ld SOIC M14.15
HFA3046BZ (Note) HFA3046BZ -55 to 125 14 Ld SOIC (Pb-free) M14.15
HFA3096B HFA3096B -55 to 125 16 Ld SOIC M16.15
HFA3096BZ (Note) HFA3096BZ -55 to 125 16 Ld SOIC (Pb-free) M16.15
HFA3127B HFA3127B -55 to 125 16 Ld SOIC M16.15
HFA3127BZ (Note) HFA3127BZ -55 to 125 16 Ld SOIC (Pb-free) M16.15
HFA3127R 127 -55 to 125 16 Ld 3x3 QFN L16.3x3
HFA3127RZ (Note) 127Z -55 to 125 16 Ld 3x3 QFN (Pb-free) L16.3x3
HFA3128B HFA3128B -55 to 125 16 Ld SOIC M16.15
HFA3128BZ (Note) HFA3128BZ -55 to 125 16 Ld SOIC (Pb-free) M16.15
HFA3128R 128 -55 to 125 16 Ld 3x3 QFN L16.3x3
HFA3128RZ (Note) 128Z -55 to 125 16 Ld 3x3 QFN (Pb-free) L16.3x3
*Add “96” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
Data Sheet
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 1998, 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
December 21, 2005

HFA3127BZ 数据手册

Renesas Electronics(瑞萨电子)
13 页 / 0.29 MByte
Renesas Electronics(瑞萨电子)
11 页 / 0.18 MByte

HFA3127 数据手册

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Intersil(英特矽尔)
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Intersil(英特矽尔)
超高频晶体管阵列 Ultra High Frequency Transistor Arrays
Intersil(英特矽尔)
Intersil(英特矽尔)
Renesas Electronics(瑞萨电子)
晶体管阵列,Intersil晶体管之间完全隔离### 双极晶体管,Intersil
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