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¥ 240.864
HMC995LP5GE 数据手册 - Hittite
制造商:
Hittite
分类:
放大器IC与RF模块
封装:
QFN-24
Pictures:
3D模型
符号图
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HMC995LP5GE数据手册
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - lineAr & power - smT
1
HMC9 95LP5GE
V0 2.1112
GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT
WITH POWER DETECTOR, 12 - 16 GHz
General Description
Features
Functional Diagram
The HMC995LP5GE is a 4 stage GaAs pHEMT MMIC
2 Watt Power Amplier with an integrated temperature
compensated on-chip power detector which operates
between 12 and 16 GHz. The HMC995LP5GE provides
27 dB of gain, 35.5 dBm of saturated output power,
and 24% PAE from a +7V supply. The HMC995LP5GE
exhibits excellent linearity and is optimized for high
capacity digital microwave radio. It is also ideal for
13.75 to 14.5 GHz Ku Band VSAT transmitters as
well as SATCOM applications. The HMC995LP5GE
amplier I/Os are internally matched to 50 Ohms
and is packaged in a leadless QFN 5x5 mm surface
mount package and requires no external matching
components.
Intergrated Power Detector
Saturated Output Power: 35.5 dBm @ 24% PAE
High Output IP3: 41 dBm
High Gain: 27 dB
DC Supply: +5V to +7V @ 1200 mA
No External Matching Required
Electrical Specications
T
A
= +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200 mA
[1]
Typical Applications
The HMC995LP5GE is ideal for:
Parameter Min. Typ. Max. Units
Frequency Range 12 - 16 GHz
Gain
[3]
24 27 dB
Gain Variation Over Temperature 0.03 dB/ °C
Input Return Loss 9 dB
Output Return Loss 15 dB
Output Power for 1 dB Compression (P1dB) 32 34.5 dBm
Saturated Output Power (Psat) 35.5 dBm
Output Third Order Intercept (IP3)
[2]
41 dBm
Total Supply Current (Idd) 1200 mA
[1] Adjust (Vgg1=Vgg2=Vgg3) between -2 to 0V to achieve Idd = 1200mA typical.
[2] Measurement taken at +7V @ 1200mA, Pout / Tone = +22 dBm
[3] Board loss subtracted out
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