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IGB03N120H2E3045A 数据手册 - Infineon（英飞凌）
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IGB03N120H2E3045A数据手册
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IGP03N120H2, IGB03N120H2
IGW03N120H2
Power Semiconductors
1 Jun-03
HighSpeed 2-Technology
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
• 2
nd
generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- E
off
optimized for I
C
=3A
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V
CE
I
C
E
off
T
j
Package Ordering Code
IGW03N120H2 1200V 3A 0.15mJ
150°C
P-TO-247 Q67040-S4596
IGP03N120H2 1200V 3A 0.15mJ 150°C P-TO-220-3-1 Q67040-S4599
IGB03N120H2 1200V 3A 0.15mJ 150°C P-TO-263 (D
2
PAK) Q67040-S4598
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CE
1200 V
Triangular collector current
T
C
= 25°C, f = 140kHz
T
C
= 100°C, f = 140kHz
I
C
9.6
3.9
Pulsed collector current, t
p
limited by T
jmax
I
Cpuls
9.9
Turn off safe operating area
V
CE
≤ 1200V, T
j
≤ 150°C
-
9.9
A
Gate-emitter voltage V
GE
±20
V
Power dissipation
T
C
= 25°C
P
tot
62.5 W
Operating junction and storage temperature T
j
, T
stg
-40...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
225 (for SMD)
°C
G
C
E
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
P-TO-247-3-1
(TO-247AC)
Downloaded from Elcodis.com electronic components distributor
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