Datasheet 搜索 > 光耦合器/光隔离器 > Vishay Semiconductor（威世） > ILQ621-X007 数据手册 > ILQ621-X007 数据手册 2/10 页
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ILQ621-X007 数据手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
光耦合器/光隔离器
封装:
PDIP-16
描述:
光电耦合器，光电晶体管输出（双通道，四通道） Optocoupler, Phototransistor Output (Dual, Quad Channel)
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P7
型号编码规则在P1P2
技术参数、封装参数在P2
电气规格在P3
导航目录
ILQ621-X007数据手册
Page:
of 10 Go
若手册格式错乱，请下载阅览PDF原文件
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83654
2 Rev. 1.5, 20-Dec-07
ILD621/ILD621GB/ILQ621/ILQ621GB
Vishay Semiconductors
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
Note
For additional information on the available options refer to option information.
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ILD621-X007 CTR > 50 %, dual, SMD-8 (option 7)
ILD621-X009 CTR > 50 %, dual, SMD-8 (option 9)
ILD621GB-X007 CTR > 100 %, dual, SMD-8 (option 7)
ILQ621-X006 CTR > 50 %, quad, DIP-16 400 mil
ILQ621-X007 CTR > 50 %, quad, SMD-16 (option 7)
ILQ621-X009 CTR > 50 %, quad, SMD-16 (option 9)
ILQ621GB-X006 CTR > 100 %, quad, DIP-16 400 mil
ILQ621GB-X007 CTR > 100 %, quad, SMD-16 (option 7)
ILQ621GB-X009 CTR > 100 %, quad, SMD-16 (option 9)
ORDER INFORMATION
PART REMARKS
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6.0 V
Forward current I
F
60 mA
Surge current I
FSM
1.5 A
Power dissipation P
diss
100 mW
Derate from 25 °C 1.33 mW/°C
OUTPUT
Collector emitter reverse voltage V
ECO
70 V
Collector current
I
C
50 mA
t < 1.0 ms I
C
100 mA
Power dissipation P
diss
150 mW
Derate from 25 °C - 2.0 mW/°C
COUPLER
Isolation test voltage t = 1.0 s V
ISO
5300 V
RMS
Package dissipation
ILD621 400 mW
ILD621GB 400 mW
Derate from 25 °C 5.33 mW/°C
Package dissipation
ILQ621 500 mW
ILQ621GB 500 mW
Derate from 25 °C 6.67 mW/°C
Creepage distance ≥ 7.0 mm
Clearance distance ≥ 7.0 mm
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Junction temperature T
j
100 °C
Soldering temperature
(2)
2.0 mm from case bottom T
sld
260 °C
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