Datasheet 搜索 > 放大器、缓冲器 > TI（德州仪器） > INA128HD 数据手册 > INA128HD 数据手册 1/31 页
器件3D模型￥ 958.145
INA128HD 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
放大器、缓冲器
封装:
SOIC-8
描述:
精密低功耗仪表放大器 Precision, Low Power INSTRUMENTATION AMPLIFIERS
Pictures:
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符号图
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引脚图
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页面导航:
引脚图在P3Hot
典型应用电路图在P16P17P18P19
原理图在P1P14
封装尺寸在P24
标记信息在P24
封装信息在P23P24P25
技术参数、封装参数在P5
应用领域在P1P16P25P31
电气规格在P6P7P8P9
导航目录
INA128HD数据手册
Page:
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A
1
A
2
A
3
40 kW40 kW
40 kW
40 kW
V
IN
2
1
8
3
6
5
V
IN
R
G
V+
V-
Ref
V
O
G = 1 +
49.4 kW
R
G
+
4
7
INA128, INA129
Over-Voltage
Protection
Over-Voltage
Protection
-
25 kW
(1)
25 kW
(1)
NOTE: (1) INA129: 24.7 kW
G = 1 +
50 kW
R
G
INA128:
INA129:
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Folder
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Buy
Technical
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INA128-HT
,
INA129-HT
SBOS501F –JANUARY 2010–REVISED FEBRUARY 2015
INA12x-HT Precision, Low-Power Instrumentation Amplifiers
1 Features 3 Description
The INA128-HT and INA129-HT are low-power,
1
• Low Offset Voltage: 25 uV Typical
general-purpose instrumentation amplifiers offering
• Low Input Bias Current: 50 nA Typical
(1)
excellent accuracy. The versatile three-operational-
• High CMR: 95 dB Typical
(1)
amplifier design and small size make them ideal for a
wide range of applications. Current-feedback input
• Inputs Protected to ±40 V
circuitry provides wide bandwidth even at high gain. A
• Wide Supply Range: ±2.25 V to ±18 V
single external resistor sets any gain from 1 to 10000.
• Low Quiescent Current: 2 mA Typical
(1)
The INA128-HT provides an industry-standard gain
equation; the INA129-HT gain equation is compatible
2 Applications
with the AD620.
• Bridge Amplifiers
The INA128-HT and INA129-HT are laser trimmed for
very low offset voltage (25 μV Typ) and high
• Thermocouple Amplifiers
common-mode rejection (93 dB at G ≥ 100). These
• RTD Sensor Amplifiers
devices operate with power supplies as low as ±2.25
• Medical Instrumentation
V, and quiescent current of 2 mA, typically. Internal
• Data Acquisition input protection can withstand up to ±40 V without
damage.
• Supports Extreme Temperature Applications:
Texas Instruments' high-temperature products use
– Controlled Baseline
highly optimized silicon (die) solutions with design
– One Assembly/Test Site
and process enhancements to maximize performance
– One Fabrication Site
over extended temperatures.
– Available in Extreme Temperature Ranges
The INA129-HT is available in 8-pin ceramic DIP and
(–55°C to 210°C)
(2)
8-pin ceramic surface-mount packages, specified for
– Extended Product Life Cycle
the –55°C to 210°C temperature range. The INA128-
HT is available in an 8-pin SOIC-8 surface-mount
– Extended Product-Change Notification
package, specified for the –55°C to 175°C
– Product Traceability
temperature range.
Device Information
(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
INA128-HT SOIC (8) 4.90 mm × 3.91 mm
CFP (8) 6.90 mm × 5.65 mm
INA129-HT
CDIP SB (8) 11.81 mm × 7.49 mm
(1) For all available packages, see the orderable addendum at
(1) Typical values for 210°C application.
the end of the data sheet.
(2) Custom temperature ranges available.
4 Simplified Schematic
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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