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器件3D模型￥ 2.891
INA826AIDGKR 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
仪表放大器
封装:
VSSOP-8
描述:
TEXAS INSTRUMENTS INA826AIDGKR 仪器放大器, 单路, 1个放大器, 40 µV, 1 V/µs, 1 MHz, 2.7V 至 36V, ± 1.35V 至 ± 18V, VSSOP
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3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P6Hot
典型应用电路图在P20
封装尺寸在P33P35P36
型号编码规则在P2
标记信息在P33
封装信息在P2P33P34P35P36
技术参数、封装参数在P2
应用领域在P1P43
电气规格在P3P4P5
导航目录
INA826AIDGKR数据手册
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INA826
www.ti.com
SBOS562E –AUGUST 2011–REVISED APRIL 2013
ELECTRICAL CHARACTERISTICS (continued)
At T
A
= +25°C, V
S
= ±15 V, R
L
= 10 kΩ, V
REF
= 0 V, and G = 1, unless otherwise noted.
INA826
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
REFERENCE INPUT
R
IN
Input impedance 100 kΩ
Voltage range (V–) (V+) V
Gain to output 1 V/V
Reference gain error 0.01 %
POWER SUPPLY
Single +2.7 +36 V
V
S
Power-supply voltage
Dual ±1.35 ±18 V
V
IN
= 0 V 200 250 µA
I
Q
Quiescent current
vs temperature, T
A
= –40°C to +125°C 250 300 µA
TEMPERATURE RANGE
Specified –40 +125 °C
Operating –50 +150 °C
THERMAL INFORMATION
INA826 INA826 INA826
THERMAL METRIC
(1)
D (SOIC) DGK (MSOP) DRG (DFN) UNITS
8 PINS 8 PINS 8 PINS
θ
JA
Junction-to-ambient thermal resistance 141.4 215.4 50.9
θ
JCtop
Junction-to-case (top) thermal resistance 75.4 66.3 60.0
θ
JB
Junction-to-board thermal resistance 59.6 97.8 25.4
°C/W
ψ
JT
Junction-to-top characterization parameter 27.4 10.5 1.2
ψ
JB
Junction-to-board characterization parameter 59.1 96.1 25.5
θ
JCbot
Junction-to-case (bottom) thermal resistance N/A N/A 7.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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