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INA826AIDRGR 数据手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
放大器、缓冲器
封装:
WFDFN-8
描述:
精密， 200 μA电源电流， 2.7 V至36 V电源仪表放大器具有轨至轨输出 Precision, 200-μA Supply Current, 2.7-V to 36-V Supply Instrumentation Amplifier with Rail-to-Rail Output
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P6Hot
典型应用电路图在P20
封装尺寸在P33P35P36
型号编码规则在P2
标记信息在P33
封装信息在P2P33P34P35P36
技术参数、封装参数在P2
应用领域在P1P43
电气规格在P3P4P5
导航目录
INA826AIDRGR数据手册
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INA826
SBOS562E –AUGUST 2011–REVISED APRIL 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION
(1)
PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR
MSOP-8 DGK
INA826 SO-8 D
DFN-8 DRG
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
INA826 UNIT
Supply voltage ±20 V
Input voltage range (–V
S
) – 40 to (+V
S
) + 40 V
REF input ±20 V
Output short-circuit
(2)
Continuous
Operating temperature range, T
A
–50 to +150 °C
Storage temperature range, T
A
–65 to +150 °C
Junction temperature, T
J
+175 °C
Human body model (HBM) 2500 V
ESD rating Charged device model (CDM) 1500 V
Machine model (MM) 150 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) Short-circuit to V
S
/2.
2 Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links: INA826
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