Datasheet 搜索 > MOS管 > Infineon（英飞凌） > IPP90R800C3XKSA1 数据手册 > IPP90R800C3XKSA1 数据手册 1/10 页
￥ 7.264
IPP90R800C3XKSA1 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
MOS管
封装:
TO-220-3
描述:
Infineon CoolMOS C3 系列 Si N沟道 MOSFET IPP90R800C3XKSA1, 6.9 A, Vds=900 V, 3引脚 TO-220封装
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
标记信息在P1
功能描述在P1
电气规格在P2
导航目录
IPP90R800C3XKSA1数据手册
Page:
of 10 Go
若手册格式错乱，请下载阅览PDF原文件
IPP90R800C3
CoolMOS
™
Power Transistor
Features
• Lowest figure-of-merit R
ON
x Q
g
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Maximum ratings, at T
J
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
A
T
C
=100 °C
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=1.4 A, V
DD
=50 V
157 mJ
Avalanche energy, repetitive t
AR
2),3)
E
AR
I
D
=1.4 A, V
DD
=50 V
Avalanche current, repetitive t
AR
2),3)
I
AR
A
MOSFET dv /dt ruggedness dv /dt
V
DS
=0...400 V
V/ns
Gate source voltage
V
GS
static V
AC (f>1 Hz)
Power dissipation
P
tot
T
C
=25 °C
W
Operating and storage temperature
T
J
, T
stg
°C
Mounting torque M3 and M3.5 screws 60 Ncm
±30
104
-55 ... 150
0.46
1.4
50
±20
Value
6.9
4.4
15
V
DS
@ T
J
=25°C 900 V
R
DS(on),max
@ T
J
= 25°C 0.8
Ω
Q
g,typ
42 nC
Product Summary
Type Package Marking
IPP90R800C3 PG-TO220 9R800C
PG-TO220
Rev. 1.0 page 1 2008-07-30
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
