Web Analytics
Datasheet 搜索 > FET驱动器 > International Rectifier(国际整流器) > IR2101 数据手册 > IR2101 数据手册 1/14 页
IR2101
器件3D模型
3.413
导航目录
  • 典型应用电路图在P1
  • 原理图在P4
  • 封装尺寸在P13
  • 型号编码规则在P14
  • 标记信息在P14
  • 功能描述在P1
  • 技术参数、封装参数在P2
  • 电气规格在P3
IR2101数据手册
Page:
of 14 Go
若手册格式错乱,请下载阅览PDF原文件
Data Sheet No. PD60043 Rev.O
Typical Connection
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V, and 15V logic input compatible
Matched propagation delay for both channels
Outputs in phase with inputs (IR2101) or out of
phase with inputs (IR2102)
Also available LEAD-FREE
HIGH AND LOW SIDE DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/- 130 mA / 270 mA
V
OUT
10 - 20V
t
on/off
(typ.) 160 & 150 ns
Delay Matching 50 ns
IR2101
(
S
)
/IR2102
(
S
)
& (PbF)
Description
The IR2101(S)/IR2102(S) are high voltage, high speed
power MOSFET and IGBT drivers with independent
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL
output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates up to 600 volts.
www.irf.com 1
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
IR2102
V
CC
V
B
V
S
HO
LOCOM
HIN
LIN
LIN
HIN
up to 600V
TO
LOAD
V
CC
IR2101
V
CC
V
B
V
S
HO
LOCOM
HIN
LIN
LIN
HIN
up to 600V
TO
LOAD
V
CC
Packages
8-Lead SOIC
IR2101S/IR2102S
8-Lead PDIP
IR2101/IR2102

IR2101 数据手册

International Rectifier(国际整流器)
14 页 / 0.13 MByte
器件 Datasheet 文档搜索
器件加载中...
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件