Datasheet 搜索 > FET驱动器 > Infineon（英飞凌） > IR2110SPBF 数据手册 > IR2110SPBF 数据手册 1/18 页
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IR2110SPBF 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
分类:
FET驱动器
封装:
SOIC-16
描述:
INFINEON IR2110SPBF 双路驱动器芯片, 高压侧和低压侧, 10V-20V电源, 2.5A输出, 94ns延迟, SOIC-16
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IR2110SPBF数据手册
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Features
• Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs
Data Sheet No. PD60147 rev.
U
HIGH AND LOW SIDE DRIVER
Product Summary
V
OFFSET
(IR2110) 500V max.
(IR2113) 600V max.
I
O
+/- 2A / 2A
V
OUT
10 - 20V
t
on/off
(typ.) 120 & 94 ns
Delay Matching (IR2110) 10 ns max.
(IR2113) 20ns max.
www.irf.com 1
Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output chan-
nels. Proprietary HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 500 or 600 volts.
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
Typical Connection
Packages
14-Lead PDIP
IR2110/IR2113
16-Lead SOIC
IR2110S/IR2113S
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